Electron transport in suspended semiconductor structures with two-dimensional electron gas

摘要

We study electron transport in suspended semiconductor microstructures fabricated from AlAs/ GaAs membranes containing a high mobility two-dimensional electron gas. In quantizing magnetic fields, a reflection of edge current channels from the border of suspended area is observed resulting in the absence of vanishing magnetoresistance in the quantum Hall effect (QHE) regime. Relocation of this border out of the Hall bar revives the QHE. We have also found that the critical current of the breakdown of QHE in suspended samples is three times lower than in non-suspended samples due to the peculiarity of heat transport in the membranes.