A model for the bandgap energy of the N-rich GaNAs(0 ≤ x ≤ 0.07)

摘要

A model for the bandgap energy of the N-rich GaNAs is developed. We find that the evolution of the conduction band minimum and the valence band maximum in the N-rich GaNAs is due to two factors. One is intraband coupling within the conduction band and separately within the valence band. The other one is the As level. It can pin the valence band maximum near the As level when the As content is large enough. It is also found that the character of the As impurity band is similar to the P impurity band in the N-rich GaNP.