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Efficiency droop in AIGalnP and GalnN light-emitting diodes

机译：AIGalnP和GalnN发光二极管的效率下降

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摘要

At room temperature, AIGalnP pn-junction light-emitting diodes (LEDs) emitting at 630 nm do not exhibit an efficiency droop. However, upon cooling the AIGalnP LEDs to cryogenic temperatures, they show a pronounced efficiency droop. We attribute the efficiency droop in AIGalnP LEDs to electron-drift-induced reduction in injection efficiency (i.e., carrier leakage out of the active region) mediated by the asymmetry of the pn junction, specifically the disparity between electron and hole concentrations and mobilities, with the concentration disparity exacerbated at low temperatures.
机译：在室温下，以630 nm发射的AIGalnP pn结发光二极管（LED）不会出现效率下降。但是，将AIGalnP LED冷却至低温后，它们会显示出明显的效率下降。我们将AIGalnP LED的效率下降归因于电子漂移引起的pn结非对称性介导的注入效率下降（即载流子从有源区泄漏出来），特别是电子与空穴浓度和迁移率之间的差异，在低温下浓度差异加剧。

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  • 来源
    《Applied Physics Letters》 |2012年第11期|p.111106.1-111106.4|共4页
  • 作者

    Jong-ln Shim; Dong-Pyo Han; Hyunsung Kim; Dong-Soo Shin; Guan-Bo Lin; David S. Meyaard; Qifeng Shan; Jaehee Cho; E. Fred Schubert; Hyunwook Shim; Cheolsoo Sone;

  • 作者单位

    Department of Electronics and Communication Engineering, Hanyang University, Ansan 426-791,Korea;

    Department of Electronics and Communication Engineering, Hanyang University, Ansan 426-791,Korea;

    Department of Electronics and Communication Engineering, Hanyang University, Ansan 426-791,Korea;

    Department of Applied Physics, Hanyang University, Ansan 426-791, Korea;

    Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy,New York 12180, USA;

    Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy,New York 12180, USA;

    Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180, USA;

    Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy,New York 12180, USA;

    Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy,New York 12180, USA,Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180, USA;

    R&D Institute, Samsung LED, Suwon 443-743, South Korea;

    R&D Institute, Samsung LED, Suwon 443-743, South Korea;

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