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Enhancing gas induced charge doping in graphene field effect transistors by non-covalent functionalization with polyethyleneimine

机译:通过聚乙烯亚胺的非共价官能化增强石墨烯场效应晶体管中的气体感应电荷掺杂

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摘要

We demonstrate that large-area, graphene field effect transistors with a passive parylene substrate and a polyethyleneimine functional layer have enhanced sensitivity to CO_2 gas exposure. The electron doping of graphene, caused by protonated amine groups within the polyethyleneimine, is modulated by the formation of negatively charged species generated by CO_2 adsorption. The charge doping mechanism is general, and quantitative doping density changes can be determined from the graphene field effect transistor characteristics. © 2072 American Institute of Physics.
机译:我们证明了具有被动聚对二甲苯衬底和聚乙烯亚胺功能层的大面积石墨烯场效应晶体管对CO_2气体暴露具有增强的敏感性。聚乙烯亚胺中质子化的胺基引起的石墨烯电子掺杂,通过CO_2吸附生成的带负电荷的物质来调节。电荷掺杂机制是一般的,并且可以根据石墨烯场效应晶体管的特性确定定量的掺杂密度变化。 ©2072美国物理研究所。

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  • 来源
    《Applied Physics Letters》 |2012年第11期|p.113106.1-113106.4|共4页
  • 作者单位

    Regroupement Quebecois sur les materiaux de pointe, Montreal, Quebec H3C 3J7, Canada,Department of Electrical and Computer Engineering, McGill University, Montreal, Quebec H3A 2A7,Canada;

    Regroupement Quebecois sur les materiaux de pointe, Montreal, Quebec H3C 3J7, Canada,Department of Electrical and Computer Engineering, McGill University, Montreal, Quebec H3A 2A7,Canada;

    Centre Quebecois sur les Materiaux Fonctionnels, Quebec, Quebec G1V 0A6, Canada,Departement de Chimie, Universite du Quebec a Montreal, Montreal, Quebec H3C 3P8, Canada;

    Centre Quebecois sur les Materiaux Fonctionnels, Quebec, Quebec G1V 0A6, Canada,Departement de Chimie, Universite du Quebec a Montreal, Montreal, Quebec H3C 3P8, Canada;

    Regroupement Quebecois sur les materiaux de pointe, Montreal, Quebec H3C 3J7, Canada,Department of Electrical and Computer Engineering, McGill University, Montreal, Quebec H3A 2A7,Canada;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
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  • 入库时间 2022-08-18 03:17:08

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