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Effects of nanowire texturing on the performance of Si/organic hybrid solar cells fabricated with a 2.2 μm thin-film Si absorber

机译:纳米线纹理化对使用2.2μm薄膜Si吸收剂制造的Si /有机混合太阳能电池性能的影响

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摘要

Hybrid solar cells are fabricated by spin coating poly(3,4-ethylene-dioxythiophene): polystyrenesulfonate (PEDOT:PSS) on planar Si and Si-nanowires (SiNWs) arrays prepared by electroless chemical etching. With only a 2.2 μm thick Si absorber thin film, the short-circuit current density and power conversion efficiency (PCE) of SiNWs/PEDOT cell increase from 12.5 to 13.6 mA/cm~2 and from 5.4% to 5.6%, respectively, as compared to planar Si/PEDOT cell. A maximum external quantum efficiency of 56.6% is obtained for the SiNWs/PEDOT cell. The promising PCE obtained demonstrates the potential of realizing Si/PEDOT and SiNWs/PEDOT hybrid cells using low-cost Si thin films instead of bulk Si substrate.
机译:通过将聚(3,4-乙烯-二氧噻吩):聚苯乙烯磺酸盐(PEDOT:PSS)旋涂在通过化学化学刻蚀制备的平面Si和Si-纳米线(SiNWs)阵列上来制造混合太阳能电池。仅用2.2μm厚的Si吸收体薄膜,SiNWs / PEDOT电池的短路电流密度和功率转换效率(PCE)分别从12.5提高到13.6 mA / cm〜2,从5.4%提高到5.6%。与平面Si / PEDOT电池相比。 SiNWs / PEDOT电池的最大外部量子效率为56.6%。获得的有前途的PCE展示了使用低成本的Si薄膜代替块状Si衬底实现Si / PEDOT和SiNWs / PEDOT混合电池的潜力。

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  • 来源
    《Applied Physics Letters》 |2012年第10期|p.103104.1-103104.4|共4页
  • 作者单位

    Nanofabrication Center, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798,Institute of Materials Research and Engineering, A*STAR, 3 Research Link, Singapore 117602,CINTRA UMICNRS/NTU/THALES 3288, Research Techno Plaza, 50 Nanyang Drive, Border X Block,Level 6, Singapore 637553;

    Institute of Materials Research and Engineering, A*STAR, 3 Research Link, Singapore 117602;

    Nanofabrication Center, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798,CINTRA UMICNRS/NTU/THALES 3288, Research Techno Plaza, 50 Nanyang Drive, Border X Block,Level 6, Singapore 637553;

    Nanofabrication Center, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798,CINTRA UMICNRS/NTU/THALES 3288, Research Techno Plaza, 50 Nanyang Drive, Border X Block,Level 6, Singapore 637553;

    Nanofabrication Center, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798;

    Nanofabrication Center, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798,CINTRA UMICNRS/NTU/THALES 3288, Research Techno Plaza, 50 Nanyang Drive, Border X Block,Level 6, Singapore 637553;

    Nanofabrication Center, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798,CINTRA UMICNRS/NTU/THALES 3288, Research Techno Plaza, 50 Nanyang Drive, Border X Block,Level 6, Singapore 637553;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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