Highly moisture resistant Ga-doped ZnO films with textured surface for thin-film solar cells with indium codoping fabricated by ion plating with direct-current arc discharge

摘要

Highly transparent conductive Ga-doped ZnO (GZO) films and GZO films with indium codoping (GZO:In) were deposited on glass substrates at 200 ℃ by ion plating using direct-current arc discharge. Etching in 0.1 wt % HCI solution made it possible to form a craterlike textured surface with a high haze value. For a textured GZO:In film with a remaining thickness of 388nm, the sheet resistance was 8.1 Ω/□. Damp-heat test results showed that highly moisture-resistant GZO films with a textured surface could be achieved after indium codoping. For the textured GZO:In film, the relative change in sheet resistance was as low as 5.8% while maintaining a high transparency. The moisture-resistant GZO:In films with a textured surface have great potential for use as window layers in thin-film solar cells.