机译:通过应变增加半导体中的磁空位
Department of Applied Physics, Nanjing University of Science and Technology, Nanjing, Jiangsu 210094,People's Republic of China;
School of Science, Nanjing Forestry University, Nanjing, Jiangsu 210037, People's Republic of China;
Chemistry Department, Iowa State University, Ames, Iowa, 50011, USA;
Key Laboratory of Computational Physical Sciences (Ministry of Education) and Department of Physics,Fudan University, Shanghai 200433, People's Republic of China;
Department of Applied Physics, Nanjing University of Science and Technology, Nanjing, Jiangsu 210094,People's Republic of China;
Department of Applied Physics, Nanjing University of Science and Technology, Nanjing, Jiangsu 210094,People's Republic of China;
Department of Applied Physics, Nanjing University of Science and Technology, Nanjing, Jiangsu 210094,People's Republic of China;
Division of Materials Science, NanYang Technological University, 50 NanYang Avenue, Singapore 639798,Singapore;
机译:氧空位对钴掺杂zno稀磁半导体磁性能的影响
机译:氧空位在基于ZnO的稀磁半导体中磁耦合中的微弱作用
机译:弹性应变机制,可影响温度,磁场和压力对磁性半导体的电阻和磁性的影响
机译:通过氧空位和应变调整LaMnO3薄膜的铁磁性能。
机译:块状和量子约束III-V半导体中的应变增强型光泵核磁共振
机译:自旋电子学行为的发生(半金属性自旋无间隙半导体和双极磁性半导体)取决于BiFe0.83Ni0.17O3中氧空位的位置
机译:第一原理计算氢气效应的α铁空位的形成和扩散:探讨氢增强应变诱导的空位机制