机译:硅纳米晶增强超薄层的光致发光信号
Department of Electronic and Electrical Engineering, Trinity College Dublin, Dublin 2, Ireland;
Faculty of Physics, M.V. Lomonosov Moscow State University, 119991 Moscow, Russia;
IMTEK, Faculty of Engineering, Albert-Ludwigs-University Freiburg, 79110 Freiburg, Germany;
IMTEK, Faculty of Engineering, Albert-Ludwigs-University Freiburg, 79110 Freiburg, Germany;
Department of Electronic and Electrical Engineering, Trinity College Dublin, Dublin 2, Ireland;
Faculty of Physics, M.V. Lomonosov Moscow State University, 119991 Moscow, Russia;
机译:包含富硅氮化物和超薄氮化硅阻挡层的受控多层结构中硅纳米晶体的形成和光致发光
机译:富含硅的氮氧化物薄层中嵌入的Si纳米晶体的等离子增强光致发光建模
机译:二氧化硅基质中准有序硅纳米晶体层中Er〜(3+)离子的光致发光
机译:紫外线照射硅纳米晶体的强烈光致发光和光致发光
机译:纳米晶体尺寸和局部环境影响多孔硅分析物的光致发光响应,并研究单层和少层WS2的激光照明和化学蒸汽效应
机译:硅纳米晶体:阳离子胶体纳米晶体具有胶体稳定性pH无关的正表面电荷和尺寸可调的近红外至红色光谱范围内的光致发光(Adv。Sci。2/2016)
机译:表面对二氧化硅基质硅纳米晶体光致发光的影响