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Highly uniform bipolar resistive switching characteristics in TiO_2/BaTiO_3/TiO_2 multilayer

机译：TiO_2 / BaTiO_3 / TiO_2多层膜中高度均匀的双极电阻开关特性

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摘要

Nanoscale multilayer structure TiO_2/BaTiO_3/TiO_2 has been fabricated on Pt/Ti/SiO_2Si substrate by chemical solution deposition method. Highly uniform bipolar resistive switching (BRS) characteristics have been observed in Pt/TiO_2/BaTiO_3/TiO_2/Pt cells. Analysis of the current-voltage relationship demonstrates that the space-charge-limited current conduction controlled by the localized oxygen vacancies should be important to the resistive switching behavior. X-ray photoelectron spectroscopy results indicated that oxygen vacancies in TiO_2 play a crucial role in the resistive switching phenomenon and the introduced TiO_2/BaTiO_3 interfaces result in the high uniformity of bipolar resistive switching characteristics.
机译：通过化学溶液沉积法在Pt / Ti / SiO_2Si衬底上制备了纳米多层结构TiO_2 / BaTiO_3 / TiO_2。在Pt / TiO_2 / BaTiO_3 / TiO_2 / Pt电池中已观察到高度均匀的双极电阻开关（BRS）特性。对电流-电压关系的分析表明，受局部氧空位控制的空间电荷限制电流传导对电阻开关行为很重要。 X射线光电子能谱结果表明，TiO_2中的氧空位在电阻转换现象中起关键作用，引入的TiO_2 / BaTiO_3界面导致双极电阻转换特性的高度均匀性。

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  • 来源
    《Applied Physics Letters》 |2013年第26期|262903.1-262903.5|共5页
  • 作者

    W. J. Ma; S. P. Lin; J. M. Luo; X. Y. Zhang; Ying Wang; Z. X. Li; B. Wang; Yue Zheng;

  • 作者单位

    State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, 510275 Guangzhou, China ,Micro & Nano Physics and Mechanics Research Laboratory, School of Physics and Engineering, Sun Yat-Sen University, 510275 Guangzhou, China;

    Micro & Nano Physics and Mechanics Research Laboratory, School of Physics and Engineering, Sun Yat-Sen University, 510275 Guangzhou, China ,Sino-French Institute of Nuclear Engineering and Technology, Zhuhai Campus, Sun Yat-Sen University, Zhuhai 519082, China;

    State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, 510275 Guangzhou, China;

    State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, 510275 Guangzhou, China ,Micro & Nano Physics and Mechanics Research Laboratory, School of Physics and Engineering, Sun Yat-Sen University, 510275 Guangzhou, China;

    State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, 510275 Guangzhou, China ,Micro & Nano Physics and Mechanics Research Laboratory, School of Physics and Engineering, Sun Yat-Sen University, 510275 Guangzhou, China;

    Micro & Nano Physics and Mechanics Research Laboratory, School of Physics and Engineering, Sun Yat-Sen University, 510275 Guangzhou, China;

    State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, 510275 Guangzhou, China;

    State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, 510275 Guangzhou, China ,Micro & Nano Physics and Mechanics Research Laboratory, School of Physics and Engineering, Sun Yat-Sen University, 510275 Guangzhou, China;

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