机译:微结构硅上的绿色立方GalnN / GaN发光二极管(100)
Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180, USA,Future Chips Constellation, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York 12180, USA;
Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180, USA,Future Chips Constellation, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York 12180, USA;
Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106, USA;
Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131, USA;
Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106, USA;
Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180, USA,Future Chips Constellation, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York 12180, USA;
机译:微结构硅上的绿色立方GaInN / GaN发光二极管(100)
机译:纳米图案蓝宝石上减少缺陷的绿色GalnN / GaN发光二极管
机译:硅衬底上绿色发光二极管InGaN / GaN型阱的相同温度GaN帽的影响
机译:GalnN / GaN绿色发光二极管的电流和光学低频噪声
机译:用于AlGaN / GaN和InAlN / GaN二极管以及在硅(111)衬底上生长的高迁移率晶体管的CMOS兼容氧化钌肖特基接触的研究。
机译:等温GaN覆盖层对硅衬底上绿色发光二极管的InGaN / GaN多量子阱的影响
机译:在LiAlO2(100)衬底上制造蓝色和绿色非极性InGaN / GaN多量子阱发光二极管