High mobility amorphous InGaZnO thin film transistor with single wall carbon nanotubes enhanced-current path

摘要

Amorphous InGaZnO/single-walled carbon nanotubes (a-IGZO/SWNTs) composite thin-film transistors were fabricated with sol-gel method. The SWNTs supply the enhanced-current path for carrier transportation, and the contact resistance was optimized by incorporating SWNTs as well. The threshold voltage (V_(th)) was modulated by adjusting the Ga content. High electrical performance was demonstrated, including a field-effect mobility of 132 cm~2/V·s and a V_(th) of 0.8 V. We have fabricated large-scale working devices with channel lengths from 20 fxm down to 0.7 (im. Moreover, the devices were stable over time. These results indicate that a-IGZO/SWNTs composite Thin-film transistors strongly sustain further investigation of their applicability.