机译:悬浮沟道石墨烯场效应晶体管中的高载流子迁移率
Institute of Microelectronics, Tsinghua University, Beijing 100084, China;
Institute of Microelectronics, Tsinghua University, Beijing 100084, China Tsinghua National Laboratory for Information Science and Technology (TNList), Beijing 100084, China;
Institute of Microelectronics, Chinese Academy of Sciences, Haidian District, Beijing 100029, China;
Institute of Microelectronics, Chinese Academy of Sciences, Haidian District, Beijing 100029, China;
Institute of Microelectronics, Chinese Academy of Sciences, Haidian District, Beijing 100029, China;
Institute of Microelectronics, Chinese Academy of Sciences, Haidian District, Beijing 100029, China;
Institute of Microelectronics, Chinese Academy of Sciences, Haidian District, Beijing 100029, China;
Institute of Microelectronics, Tsinghua University, Beijing 100084, China;
Institute of Microelectronics, Tsinghua University, Beijing 100084, China Tsinghua National Laboratory for Information Science and Technology (TNList), Beijing 100084, China;
机译:悬浮沟道石墨烯场效应晶体管中的高载流子迁移率
机译:使用石墨烯场效应晶体管了解表面活性剂/石墨烯的相互作用:将分子结构与磁滞和载流子迁移相关
机译:低场迁移率及其在高电子迁移率晶体管和其他场效应晶体管中的载流子浓度依赖性的作用
机译:热载流子应力对双栅石墨烯场效应晶体管中缺陷密度和迁移率的影响
机译:支持石墨烯界面的基本研究:石墨烯场效应晶体管(FET)中缺陷密度和理想石墨烯 - 硅肖丝狄克二极管
机译:掺入离子添加剂后共轭聚合物场效应晶体管的电荷载流子迁移率显着提高
机译:利用缓冲介质实现高场效应 石墨烯晶体管中的载流子迁移率
机译:石墨烯/鸟嘌呤界面粘接动力学近边缘X射线吸收光谱研究 - 高迁移率,有机石墨烯场效应晶体管的建议。