Influence of grain boundary on electrical properties of organic crystalline grains investigated by dual-probe atomic force microscopy

摘要

We performed electrical transport measurements on α-sexithiophene crystalline grains using a dual-probe atomic force microscopy system having two independently controlled cantilever probes. The field-effect transistor characteristics were measured by varying the distances between the two probes brought in contact with the surface of the grains. It was clearly shown by the transfer line method that the grain boundary is the dominant factor limiting the electrical properties of organic thin films. Moreover, the hole transport across the grain boundary was found to be more affected by the oxygen hole doping than that within the crystalline grain.