Repulsive interactions between dislocations and overgrown v-shaped defects in epitaxial GaN layers

摘要

The spatial distribution and the projected line directions of dislocations intersecting a cross-sectional (1010) cleavage plane of a GaN(0001) epitaxial layer is mapped using scanning tunneling microscopy. The data is correlated with the spatial positions of v-shaped defects. The dislocations are found to be bent away from the inclined semipolar facets of v-shaped defects, due to a strain-induced repulsive interaction. The dislocation distribution is characterized by agglomerations and intersecting bundles of dislocations with parallel projected line directions, stabilized by many body effects in the repulsive strain interactions.