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机译:扫描隧道显微镜研究硅化锰纳米结构与Si(111)纳米肖特基接触的电输运性质
Center for Analysis and Testing, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240, China, Department of Physics, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240, China;
Center for Analysis and Testing, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240, China, Department of Physics, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240, China;
Center for Analysis and Testing, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240, China, Department of Physics, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240, China;
Center for Analysis and Testing, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240, China, Department of Physics, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240, China;
机译:表面导电对FeSi
机译:扫描隧道显微镜研究表面传导对FeSi_2纳米岛与Si(111)之间纳米肖特基接触的电输运性能的影响
机译:Si(111)上硅化锰的形成和粗化的扫描隧道显微镜研究
机译:激光辅助扫描隧道显微镜在表面纳米结构中的纳米尺度结构损伤和结构演变
机译:超高真空扫描隧道显微镜的开发。溴暴露下硅(111)和锗(111)表面蚀刻的扫描隧道显微镜研究
机译:纳米级并联电触头的二维隧穿电阻传输线模型
机译:具有纳米级势垒宽度的硅化物/ Si肖特基接触中的低温隧穿电流增强