Characterization of the thermal properties for Si-implanted Sb_2Te_3 phase change material

摘要

The microstructure and thermal properties of Si-implanted Sb_2Te_3 were investigated. Crystalline Si-implanted Sb_2Te_3 film with relatively uniform composition depth profile was fabricated, which consists of Si~(4-x) (0 < x < 1) ions and crystalline Sb_2Te_3. No separated Te phase was found. The crystallization activation energies of crystallization increase with Si dose from 5 × 10~(15) to 2.16 × 10~(16) Si-ions/cm~2. The crystallization temperatures of the films are 149, 168, and 174℃ with 5 × 10~(15), 1 × 10~(16), and 2.16 × 10~(16) Si-ions/cm~2 ion implantation, respectively. Furthermore, the Sb_2Te_3 film implanted with the dose of 1 × 10~(16) Si-ions/cm~2 can maintain the data for 10 yr at 85 ℃, which is comparable to Ge_2Sb_2Te_5. The results indicate that the Si-implanted Sb_2Te_3 is a promising candidate for phase change memory application.