A ballistic pn junction in suspended graphene with split bottom gates

摘要

We have developed a process to fabricate suspended graphene devices with local bottom gates, and tested it by realizing electrostatically controlled pn junctions on a suspended graphene mono-layer nearly 2 μm long. Measurements as a function of gate voltage, magnetic field, bias, and temperature exhibit characteristic Fabry-Perot oscillations in the cavities formed by the pn junction and each of the contacts, with transport occurring in ballistic regime. Our results demonstrate the possibility to achieve a high degree of control on the local electronic properties of ultra-clean suspended graphene layers, a key aspect for the realization of high quality graphene nanostructures.