2.7 μm InAs quantum well lasers on InP-based InAlAs metamorphic buffer layers

摘要

This work reports 2.7 μm InAs/In_(0.6)Ga_(0.4)As quantum well lasers on InP-based metamorphic In_xAl_(1-x)As graded buffers. X-ray diffraction measurement shows favorable strain compensation effect in the quantum wells. Type-Ⅰ photoluminescence emission is observed around 2.7 μm at 77 K and red-shifts to 3 μm at 300 K. The continuous-wave lasing wavelength of the laser reaches 2.7 μm at 77 K, which is the longest wavelength from the interband lasing of InP-based antimony-free structures. The threshold current density is as low as 145 A/cm~2 and the continuous-wave output power at injection current of 400 mA is over 5 mW.