机译:通过插入超薄界面InGaZnO:N层增强a-InGaZnO薄膜晶体管的偏置应力稳定性
Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
机译:通过插入超薄界面InGaZnO:N层增强a-InGaZnO薄膜晶体管的偏置应力稳定性
机译:热预算退火和主动层缺陷含量的协作优化增强了Ingazno薄膜晶体管的电特性和偏置应力稳定性
机译:界面过量氧对自对准共面InGaZnO薄膜晶体管正偏置温度应力不稳定性的影响
机译:负偏压和照明应力下漏极偏压对非晶InGaZnO薄膜晶体管不稳定性的影响
机译:InGaZnO薄膜晶体管的后处理,以改善偏置照明应力的可靠性。
机译:具有埋沟道层的非晶InGaZnO薄膜晶体管的电性能和偏压应力稳定性
机译:出版商的注意事项:“界面过量氧对自排列共青薄膜薄膜晶体管的正偏压稳定性的影响”苹果酱。物理。吧。 108,141604(2016)