Electronic transport and Schottky barrier heights of p-type CuAIO_2 Schottky diodes

摘要

A CuAlO_2 Schottky diode was fabricated and investigated using current density-voltage (J-V) and capacitance-voltage (C-V) methods. It is shown that the barrier height (qØ_B) determined from J-V measurements is lower than that determined from C-V measurements and qØ_B determined from C-V measurements is close to the Schottky limit. This is due to a combined effect of the image-force lowering and tunneling. Time domain measurements provide evidence of the domination of electron trapping with long-second lifetime in CuAlO_2. Carrier capture and emission from charge traps may lead to the increased probability of tunneling, increasing the ideality factor.