机译:在符合InGaN的衬底上生长的GaN薄膜的X射线探针
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
Department of Materials Science, University of Science and Technology Beijing, Beijing 100083, China;
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China;
机译:在符合InGaN的衬底上生长的GaN薄膜的X射线探针
机译:金属有机气相外延生长在r面蓝宝石衬底上生长的[1120]取向的InGaN / GaN薄膜的阴极发光特性
机译:同步X射线衍射特征在选择性生长基材上生长的GaN同性恋薄膜的遗传
机译:在降低的温度下外延生长在GaN模板上的GaN和InGaN薄膜中的螺旋型表面缺陷
机译:通过发光光谱和X射线衍射测定在6H-SiC(0001)衬底上生长的GaN和Al(x)Ga(1-x)N薄膜的应变和组成。
机译:在a平面和m平面GaN衬底上生长的InGaN / GaN多量子阱的光学和偏振特性的研究
机译:在LiAlO2(001)衬底上生长的非极性m面GaN膜和极化的InGaN / GaN LED