The physics and backward diode behavior of heavily doped single layer MoS_2 based p-n junctions

摘要

The single layer MoS_2 is attractive for the use in the next-generation low power nanoelectronic devices because of its intrinsic bandgap compared to graphene. In this work, we investigated the transport property of a p-n junction based on two-dimensional MoS_2. The n-type and p-type doping are realized through substituting sulfur with chlorine and phosphorus. The device exhibited backward diode-like behavior with large rectifying ratios. We attribute the observed current-voltage characteristics to different heavy doping effect caused by chlorine and phosphorus. Our results may throw light on the electronic modulation of MoS_2 and realizations of complemented logics devices based on MoS_2.