Influence of structural anisotropy to anisotropic electron mobility in a-plane InN

摘要

This study reports on the anisotropic electron transport properties and a correlation between the electron mobility (μ) and the stacking faults (SFs) in the a-plane InN film. Electron mobilities measured by terahertz time-domain spectroscopy and Hall effect measurement along the in-plane [1100] (c_⊥) orientation were much higher than those of the in-plane [0001] (c_‖ orientation. This result shows a sharp contrast to higher defect density for the c_⊥ orientation as measured by x-ray diffraction. The electrons transporting through the planar SFs aligned along the c_⊥ direction are expected to experience more scattering by defects, resulting in lower μ for the c_‖ orientation.