Gate traps inducing band-bending fluctuations on AlGaN/GaN heterojunction transistors

摘要

Here, using a frequency dependent conductance analysis, we map the parallel conductance vs gate bias/frequency and further analyze the slow and fast traps as a function of the Fermi level for different gate architectures of analogous AlGaN/GaN heterojunction transistors with Schottky and SiN_x metal-insulator-semiconductor (MIS) gate. The density of interface traps (D_(it))-MIS reducing D_(it), the characteristic trap constant and the variance of the band-bending (δ_s) have been investigated for slow and fast traps. Additional gate stress appears to have a notable effect on the MIS fast trap profile with δ_s increasing up to 2.5 kT/q.