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首页> 外文期刊>Applied Physics Letters >Ultrahigh-frequency surface acoustic wave generation for acoustic charge transport in silicon
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Ultrahigh-frequency surface acoustic wave generation for acoustic charge transport in silicon

机译:产生超高频表面声波,用于硅中的声电荷传输

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摘要

We demonstrate piezo-electrical generation of ultrahigh-frequency surface acoustic waves on silicon substrates, using high-resolution UV-based nanoimprint lithography, hydrogen silsequioxane planarization, and metal lift-off. Interdigital transducers were fabricated on a ZnO layer sandwiched between two SiO_2 layers on top of a Si substrate. Excited modes up to 23.5 GHz were observed. Depth profile calculations of the piezoelectric field show this multilayer structure to be suitable for acoustic charge transport in silicon at extremely high frequencies with moderate carrier mobility requirements.
机译:我们使用高分辨率的基于紫外线的纳米压印光刻技术,氢倍半硅氧烷平面化技术和金属剥离技术,在硅基板上演示了压电产生的超高频表面声波。叉指式换能器在ZnO层上制造,该ZnO层夹在Si衬底顶部的两个SiO_2层之间。观察到高达23.5 GHz的激发模式。压电场的深度分布计算表明,这种多层结构适合在具有中等载流子迁移率要求的极高频率下在硅中进行声电荷传输。

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  • 来源
    《Applied Physics Letters》 |2013年第1期|13112.1-13112.4|共4页
  • 作者单位

    NanoElectronics Group, MESA + Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands;

    NT&D-Nanotechnology and Devices, Wirichshongardstr. 24, 52062 Aachen, Germany;

    NanoElectronics Group, MESA + Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands;

    Paul-Drude-lnstitut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany;

    NanoElectronics Group, MESA + Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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