Low-resistivity C54-TiSi_2 as a sidewall-confinement nanoscale electrode for three-dimensional vertical resistive memory

摘要

A three-dimensional (3D) double-layer HfO_2-based vertical-resistive random access memory (VRRAM) with low-resistivity G54-TiSi_2 as horizontal electrodes is demonstrated using complementary metal-oxide semiconductor processing. The electrical measurements show bipolar resistive switching by using C54-TiSi_2 as electrodes for resistive switching (RS) applications. The statistical analysis exhibits cycle-to-cycle and cell-to-cell stable non-volatile properties with robust endurance (100 cycles) and long term data retention (10~4 s), suggesting that the ultrathin sidewall of C54-TiSi_2 nanoscale electrodes serve to confine and stabilize the random nature of the conducting nanofilaments. The superior RS characteristics demonstrated here highlight the applicability of C54-TiSi_2 sidewall-confinement nanoscale electrodes to VRRAM.