机译:In_xGa_(1-x)As / AlGaAs隧道结发光晶体管的不同隧穿机理分析
Graduate Institute of Electronics Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 106, Taiwan;
Graduate Institute of Electronics Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 106, Taiwan,Graduate Institute of Photonics and Optoelectronics, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 106, Taiwan;
机译:In_xGa_(1-x)As PIN非离子化设备中的碰撞电离和带间隧穿:蒙特卡洛分析
机译:底部隧道结蓝光场效应晶体管
机译:12 GHz自发光学带宽隧道结发光晶体管
机译:in_xga_(1-x)作为隧道结发光晶体管的表征
机译:鲁棒的隧道结的制造和破坏机理分析。
机译:基于垂直磁隧道结的非易失性可编程开关的设计和制造使用共享控制晶体管结构可将面积减少40%
机译:In_xGa_ {1-x} sb mOsFET:自洽CV的性能分析 表征和直接隧道栅漏电流