Single crystal diamond for infrared sensing applications

摘要

The synthesis of new materials for thermal infrared (IR) detection has been an intensive research area in recent ye.ars. Among new semiconductor materials, synthetic diamond has the ability to function even under very high temperature and high radiation conditions. In the present work, diamond Schottky diodes with boron concentrations in the range of 10~(14)＜B ＜ 10~(17)cm~(-3) are presented as candidates for IR thermal sensors with an excellent temperature coefficient of resistance (-8.42%/K) and very low noise levels around 6.6 × 10~(-15) V~2/Hz. This enables huge performance enhancements for a wide variety of systems, e.g., automotive and space applications.