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Near-infrared refractive index of synthetic single crystal and polycrystalline diamonds at high temperatures

机译:合成单晶和多晶金刚石在高温下的近红外折射率

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摘要

We measured the refractive index n(T) and thermo-optical coefficient β(T) = (1)(dn/dT) of high quality synthetic diamonds from room temperature to high temperatures, up to 1520 K, in near-infrared spectral range at wavelength 1.56μm, using a low-coherence interferometry. A type IIa single crystal diamond produced by high pressure-high temperature technique and a transparent polycrystalline diamond grown by chemical vapor deposition were tested and revealed a very close n(T) behavior, with n = 2.384 ± 0.001 at T=300K, monotonically increasing to 2.428 at 1520K. The n(T) data corrected to thermal expansion of diamond are well fitted with 3rd order polynomials, and alternatively, with the Bose-Einstein model with an effective oscillator frequency of 970 cm~(-1). Almost linear n{T) dependence is observed above 800 K. The thermo-optical coefficient is found to increase monotonically from (0.6±0.1) × 10~(-5)K~(-1) (300K) to (2.0±0.1) × 10~(-5)K~(-1) (1300K) with a tendency to saturation at >1200K. These β(T) values are an order of magnitude lower than those known for Si, GaAs, and InP. The obtained results significantly extend the temperature range, where the refractive index of diamond was previously measured.
机译:我们在室温到1520 K的近红外温度下测量了高质量合成钻石的折射率n(T)和热光学系数β(T)=(1 / n)(dn / dT)使用低相干干涉法在波长1.56μm处的光谱范围。测试了通过高压-高温技术生产的IIa型单晶金刚石和通过化学气相沉积法生长的透明多晶金刚石,它们显示出非常接近的n(T)行为,在T = 300K时n = 2.384±0.001,单调增加在1520K时为2.428。校正金刚石热膨胀的n(T)数据与三阶多项式拟合得很好,或者与有效振荡器频率为970 cm〜(-1)的Bose-Einstein模型拟合得很好。在800 K以上观察到几乎线性的n {T)依赖性。发现热光系数从(0.6±0.1)×10〜(-5)K〜(-1)(300K)单调增加。 )×10〜(-5)K〜(-1)(1300K),在> 1200K时趋于饱和。这些β(T)值比Si,GaAs和InP已知的值低一个数量级。获得的结果大大扩展了温度范围,该温度范围是先前测量金刚石的折射率的。

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  • 来源
    《Journal of Applied Physics》 |2017年第24期|243106.1-243106.8|共8页
  • 作者单位

    General Physics Institute of Russian Academy of Sciences, Moscow 119991, Russia,National Research Nuclear University «MEPhI», Moscow 115409, Russia;

    General Physics Institute of Russian Academy of Sciences, Moscow 119991, Russia;

    General Physics Institute of Russian Academy of Sciences, Moscow 119991, Russia,Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Fryazino 141190, Russia;

    General Physics Institute of Russian Academy of Sciences, Moscow 119991, Russia,National Research Nuclear University «MEPhI», Moscow 115409, Russia,Harbin Institute of Technology, Harbin 150080, People's Republic of China;

    General Physics Institute of Russian Academy of Sciences, Moscow 119991, Russia,National Research Nuclear University «MEPhI», Moscow 115409, Russia;

    General Physics Institute of Russian Academy of Sciences, Moscow 119991, Russia,National Research Nuclear University «MEPhI», Moscow 115409, Russia,Harbin Institute of Technology, Harbin 150080, People's Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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