机译:(GeTe)_l(Sb_2Te_3)_m界面相变存储材料的相干声子研究
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST),Tsukuba Central 4,1-1-1 Higashi, Tsukuba 305-8562, Japan;
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST),Tsukuba Central 4,1-1-1 Higashi, Tsukuba 305-8562, Japan;
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST),Tsukuba Central 4,1-1-1 Higashi, Tsukuba 305-8562, Japan;
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST),Tsukuba Central 4,1-1-1 Higashi, Tsukuba 305-8562, Japan;
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST),Tsukuba Central 4,1-1-1 Higashi, Tsukuba 305-8562, Japan;
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST),Tsukuba Central 4,1-1-1 Higashi, Tsukuba 305-8562, Japan;
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573, Japan;
机译:(GeTe)
机译:基于GeTe / Sb_2Te_3超晶格的界面相变存储器中单极电阻切换机制的第一原理研究
机译:化学计量在界面相变存储器(IPCM)设备中使用的van der WAASS层叠的van der Waals的结构的影响
机译:相干声子光谱法观察的(GeTe)_2 /(Sb_2Te_3) _(20)超晶格的异常相变
机译:用于可重构RF开关和非易失性存储器的相变材料的结晶动力学和阈值电压的研究。
机译:飞秒结构相变材料的飞秒结构转变远离相干声子监测的平衡状态
机译:(GeTe)l(Sb2Te3)m界面相变存储材料的相干声子研究