Characterization of external resistance effect and performance optimization in unipolar-type SiO_x-based resistive switching memory

摘要

SiO_x-based resistive random access memory devices with metal-insulator-metal structure are compared to metal-insulator-semiconductor structures, and the effects of external resistance on device performance are characterized. The different reset behaviors are explained as a positive feedback mechanism involving a sudden voltage decrease across the external series resistance when the reset process commences. By varying external resistance, we observe a constant threshold voltage (2.46 V) for the reset process that is possibly due to a voltage-triggered switching mechanism. Our experimental results not only clarify the reset mechanism but also provide insights on optimization of external resistance for programing reliability and operating speed.