机译:具有带隙设计的渐变量子阱深度的GaAs / InGaAs量子阱太阳能电池的开路电压降到最低
Microelectronics Research Center, University of Texas at Austin, 10100 Burnet Rd., Austin, Texas 78758, USA;
Microelectronics Research Center, University of Texas at Austin, 10100 Burnet Rd., Austin, Texas 78758, USA;
Microelectronics Research Center, University of Texas at Austin, 10100 Burnet Rd., Austin, Texas 78758, USA;
Microelectronics Research Center, University of Texas at Austin, 10100 Burnet Rd., Austin, Texas 78758, USA;
Microelectronics Research Center, University of Texas at Austin, 10100 Burnet Rd., Austin, Texas 78758, USA;
Microelectronics Research Center, University of Texas at Austin, 10100 Burnet Rd., Austin, Texas 78758, USA;
机译:高浓度II型GaSb / GaAs量子环太阳能电池的开路电压恢复
机译:使用减小的InAs覆盖率来提高InAs / GaAs量子点太阳能电池的开路电压
机译:在p-i-n GaAs太阳能电池中使用InGaAs / GaSb量子棘轮以保持电压并提高转换效率
机译:InGaAs / GaAsP多量子阱太阳能电池中通过时间分辨光致发光的载流子清除时间:阱深度和势垒厚度的影响
机译:通过使用应变平衡和分布布拉格反射器优化InGaAs量子阱,改善GaAs太阳能电池中的子带隙载体收集
机译:硅衬底上直接生长的InAs / InGaAs / GaAs量子点太阳能电池
机译:高浓度II型GaSb / GaAs量子环太阳能电池的开路电压恢复