机译:通过加热磷离子注入同时实现Ge和GeSn中载流子活化和结晶性的光学研究
Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583;
Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583;
Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583;
Department of Physics, National University of Singapore, Singapore 117551;
Department of Physics, National University of Singapore, Singapore 117551;
Applied Materials - Varian Semiconductor Equipment, 35 Dory Road, Gloucester, Massachusetts 01930, USA;
Applied Materials - Varian Semiconductor Equipment, 35 Dory Road, Gloucester, Massachusetts 01930, USA;
Applied Materials - Varian Semiconductor Equipment, 35 Dory Road, Gloucester, Massachusetts 01930, USA;
Applied Materials - Varian Semiconductor Equipment, 35 Dory Road, Gloucester, Massachusetts 01930, USA;
Department of Physics, National University of Singapore, Singapore 117551;
Department of Physics, National University of Singapore, Singapore 117551;
Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583;
机译:通过加热磷离子注入同时实现Ge和GeSn中载流子活化和结晶性的光学研究
机译:非晶态和结晶态锗层中磷的注入与活化
机译:通过温度依赖性霍尔效应测量研究硅注入的Al_(0.18)Ga_(0.82)N的注入损伤恢复和载流子活化
机译:椭圆光度法研究离子注入引起的单晶硅损伤深度剖面的高级光学模型
机译:磷从掺杂磷的硅通过场扩散到金刚石中,通过光激活增强了扩散。
机译:调节液晶薄膜中的载流子传输和光学双折射:有机发光二极管的新设计空间
机译:电子SWIR和MWIR光电应用GESN合金中光学和载体重组过程的数值研究