In-situ high resolution transmission electron microscopy observation of silicon nanocrystal nucleation in a SiO_2 bilayered matrix

摘要

Solid-state nucleation of Si nanocrystals in a SiO_2 bilayered matrix was observed at temperatures as low as 450 ℃. This was achieved by aberration corrected high-resolution transmission electron microscopy (HRTEM) with real-time in-situ heating up to 600 ℃. This technique is a valuable characterization tool especially with the recent interest in Si nanostructures for light emitting devices, non-volatile memories, and third-generation photovoltaics which all typically require a heating step in their fabrication. The control of size, shape, and distribution of the Si nanocrystals are critical for these applications. This experimental study involves in-situ observation of the nucleation of Si nanocrystals in a SiO_2 bilayered matrix fabricated through radio frequency co-sputtering. The results show that the shapes of Si nanocrystals in amorphous SiO_2 bilayered matrices are irregular and not spherical, in contrast to many claims in the literature. Furthermore, the Si nanocrystals are well confined within their layers by the amorphous SiO_2. This study demonstrates the potential of in-situ HRTEM as a tool to observe the real time nucleation of Si nanocrystals in a SiO_2 bilayered matrix. Furthermore, ideas for improvements on this in-situ heating HRTEM technique are discussed.