Infrared spectroscopic ellipsometry study of sulfur-doped In_(0.53)Ga_(0.47)As ultra-shallow junctions

摘要

Sulfur mono-layer doped In_(0.53)Ga_(0.47)As films were investigated by infrared spectroscopic ellipsometry. The complex dielectric function of doped layers shows free carrier response which can be described by a single Drude oscillator. Electrical resistivities, carrier relaxation times, and active carrier depths are obtained for the shallow n-In_(0.53)Ga_(0.47)As films. Our results indicate that sub-10nm sulfur-doped layers with active carrier concentration as high as 1.7 × 10~(19)cm~(-3) were achieved. Sheet resistances estimated from infrared spectroscopic ellipsometry are in good agreement with those obtained by electrical methods.