Photoconductivity and photo-detection response of multiferroic bismuth iron oxide

摘要

We report visible light detection with in-plane BiFeO_3 (BFO) thin films grown on pre-patterned inter-digital electrodes. In-plane configured BFO film displayed photocurrents with a 40:1 photo-to-dark-current ratio and improved photo-sensing ability for ＞ 15 000 s (4 h) under small bias voltage (42 V). Nearly, sixty percent of the photo-induced charge carriers decay in 1.0 s and follow a double-exponential decay model. At 373 K, the effect of light does not significantly increase the dark current, probably due to reduced mobility. Sub-bandgap weak monochromatic light (1 mw/cm~2) shows one fold increase in photo-charge carriers.