机译:SrTiO_3基底上的织构亚稳态VO_2(B)薄膜,具有明显增强的导电性
Department of Electrical and Computer Engineering, Texas A&M University, College Station,Texas 77843, USA,Centerfor Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos,New Mexico 87545, USA;
Centerfor Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos,New Mexico 87545, USA;
Department of Electrical and Computer Engineering, Texas A&M University, College Station,Texas 77843, USA;
Department of Electrical and Computer Engineering, Texas A&M University, College Station,Texas 77843, USA;
Centerfor Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos,New Mexico 87545, USA;
Department of Electrical and Computer Engineering, Texas A&M University, College Station,Texas 77843, USA;
机译:使用退火的AL_2O_3缓冲层集成在硅基板上的高对比度高度纹理的VO_2薄膜
机译:SrTiO_3基体上B相VO_2薄膜的外延生长和热致变色
机译:纹理K_(0.5)NA_(0.5)NBO_3薄膜通过含水化学溶液沉积在SRTIO_3底板上,用于MEMS应用
机译:在SrTiO_3衬底上生长的La_xMnO_(3.5)薄膜中增强的传输性能
机译:沉积几何形状和衬底运动对铜薄膜晶体结构的影响。
机译:沉积在(3-巯基丙基)三甲氧基硅烷(MPTMS)涂层的Si衬底上的超薄金膜中的太赫兹电导率提高
机译:si衬底上HfO 2 sub>超薄膜中的织构,孪晶和亚稳“四方”相