Onset of surface stimulated emission at 260 nm from AlGaN multiple quantum wells

摘要

We demonstrated onset of deep-ultraviolet (DUV) surface stimulated emission (SE) from c-plane AlGaN multiple-quantum well (MQW) heterostructures grown on a sapphire substrate by optical pumping at room temperature. The onset of SE became observable at a pumping power density of 630kW/cm~2. Spectral deconvolution revealed superposition of a linearly amplified spontaneous emission peak at λ ～ 257.0 nm with a full width at half maximum (FWHM) of ～ 12 nm and a superlinearly amplified SE peak at λ ～ 260 nm with a narrow FWHM of less than 2 nm. In particular, the wavelength of ～260nm is the shortest wavelength of surface SE from Ⅲ-nitride MQW heterostructures to date. Atomic force microscopy and scanning transmission electron microscopy measurements were employed to investigate the material and structural quality of the AlGaN heterostructures, showing smooth surface and sharp layer interfaces. This study offers promising results for AlGaN heterostructures grown on sapphire substrates for the development of DUV vertical cavity surface emitting lasers (VCSELs).