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High thermal stable and fast switching Ni-Ge-Te alloy for phase change memory applications

机译：高热稳定和快速切换的Ni-Ge-Te合金，用于相变存储应用

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摘要

Ni-Ge-Te phase change material is proposed and investigated for phase change memory (PCM) applications. With Ni addition, the crystallization temperature, the data retention ability, and the crystallization speed are remarkably improved. The Ni-Ge-Te material has a high crystallization temperature (250 ℃) and good data retention ability (149 ℃). A reversible switching between SET and RESET state can be achieved by an electrical pulse as short as 6 ns. Up to ～3 × 10~4 SET/RESET cycles are obtained with a resistance ratio of about two orders of magnitude. All of these demonstrate that Ni-Ge-Te alloy is a promising material for high speed and high temperature PCM applications.
机译：提出并研究了Ni-Ge-Te相变材料，用于相变存储器（PCM）应用。通过添加Ni，结晶温度，数据保持能力和结晶速度显着提高。 Ni-Ge-Te材料具有较高的结晶温度（250℃）和良好的数据保留能力（149℃）。可通过短至6 ns的电脉冲实现SET和RESET状态之间的可逆切换。电阻比约为2个数量级，可获得多达〜3×10〜4个SET / RESET周期。所有这些表明，Ni-Ge-Te合金是用于高速和高温PCM应用的有前途的材料。

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  • 来源
    《Applied Physics Letters》 |2015年第24期|242101.1-242101.4|共4页
  • 作者

    Liangliang Cao; Liangcai Wu; Wenqing Zhu; Xinglong Ji; Yonghui Zheng; Zhitang Song; Feng Rao; Sannian Song; Zhongyuan Ma; Ling Xu;

  • 作者单位

    State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China,School of Material Science and Engineering, Shanghai University, Shanghai 200436, China;

    State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;

    School of Material Science and Engineering, Shanghai University, Shanghai 200436, China;

    State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;

    State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;

    State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;

    State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;

    State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;

    Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China;

    Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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  • 入库时间 2022-08-18 03:15:24

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