机译:脉冲激光沉积制备高掺杂Si的ZnO薄膜中的电子传输
Department of Chemistry, Inorganic Chemistry Laboratory, University of Oxford, Oxford OX1 3QR, United Kingdom;
Department of Chemistry, Inorganic Chemistry Laboratory, University of Oxford, Oxford OX1 3QR, United Kingdom;
Department of Metallurgy and Materials, University of Birmingham, Birmingham B15 2TT, United Kingdom;
Department of Metallurgy and Materials, University of Birmingham, Birmingham B15 2TT, United Kingdom;
Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, United Kingdom;
Department of Chemistry, Inorganic Chemistry Laboratory, University of Oxford, Oxford OX1 3QR, United Kingdom;
机译:通过脉冲激光沉积制备的高透明导电氟掺杂ZnO薄膜
机译:通过脉冲激光沉积制备的n型导电磷掺杂ZnO薄膜的结构,电学,光致发光和光学性质
机译:氩的引入对脉冲激光沉积ZnO-In_2O_3薄膜结构和透明导电性能的影响
机译:脉冲激光沉积制备的薄ZnO膜的缺陷研究
机译:通过脉冲激光沉积开发基于ZnO的薄膜晶体管和掺磷的ZnO和(Zn,Mg)O。
机译:脉冲激光沉积制备6H-SiC(0001)衬底上VO2薄膜的增强的相变特性
机译:通过脉冲激光沉积生长的透明导电si掺杂ZnO薄膜的结构,电学和光学性质