机译:单层Ⅳ单硫族化物:SnSe,SnS,GeSe和GeS的巨大压电性
Department of Physics, Washington University, St. Louis, Missouri 63130, USA;
Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA;
Department of Nuclear Science and Engineering and Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA;
Department of Physics, Washington University, St. Louis, Missouri 63130, USA;
机译:(As_2Se_3)_(1-z)(SnSe)_(z-x)(GeSe)_x和(As_2Se_3)_(1-z)(SnSe_2)_(z-x)(GeSe_2)_x眼镜的性质和结构
机译:邻硫氰酸根合阴离子作为螯合配体:[K-6(MeOH)(9)] [Sn2Se6] [Cr(en)(2)(SnSe4)](2),[Na(H2O)(4)的合成和表征] [Cr(en)(3)](2)[GeS3OH](2)[Cr(en)(2)(GeS4)]和[Ba(H2O)(10)] [{Cr(en)}( 2)(GeSe4)(2)]
机译:APS -APS 2017年3月会议-活动-几层IV-VI化合物(GeS,GeSe,SnS和SnSe)极化拉曼光谱的第一性原理研究
机译:单层SnSe中电子输运的理论研究
机译:合成新的[(SnSe)1.15] m(TSe2)n,[(SnSe)1.16] m(VSe2)n [(SnSe)1.16] p(TaSe2)q和(SnSe)1.16(V.51Ta.49Se2)共生化合物(T = V和Ta)。
机译:掺Ge的SnSe中的巨塞贝克效应
机译:单层IV族单卤化物的巨大压电性:snse,sns,Gese和Ges