Field effect tuning of microwave Faraday rotation and isolation with large-area graphene

摘要

We have demonstrated field effect tuning of microwave frequency Faraday rotation in magnetically biased large-area graphene in a hollow circular waveguide isolator geometry. Oxidized intrinsic silicon was used as a microwave transparent back-gate for large-area graphene devices. A 26 dB modulation of isolation in the K-band was achieved with a gate voltage modulation of 10 V corresponding to a carrier density modulation of 7 × 10~(11)/cm~2. We have developed a simple analytical model for transmission and isolation of the structure. Field effect modulation of Faraday rotation can be extended to other two dimensional electronic systems and is anticipated to be useful for gate voltage controlled isolators, circulators, and other non-reciprocal devices.