In-situ x-ray studies of compositional control during synthesis of LaGaO_3 by radio frequency-magnetron sputtering

摘要

In-situ synchrotron x-ray scattering has been used to monitor and control the synthesis of LaGaO_3 epitaxial thin films by 90° off-axis RF-magnetron sputtering. Films deposited from a single LaGaO_3 source were compared with those prepared by alternating deposition from separate La_2O_3 and Ga_2O_3 sources. The conditions for growth of stoichiometric films were determined by realtime monitoring of secondary phase formation as well as from features in the diffuse scatter from island formation during synthesis. These results provide atomic-scale insight into the mechanisms taking place during reactive epitaxial growth and demonstrate how in-situ techniques can be utilized to achieve stoichiometric control in ultrathin films.