Micro-photoluminescence and micro-Raman investigations of rolled-up InGaAs/GaAs microtubes monolithically integrated on silicon

摘要

Free-standing InGaAs/GaAs microtubes have been monolithically integrated on Si platform by self-rolling of a metamorphic InGaAs/GaAs bilayer. Micro-photoluminescence (μ-PL) spectros-copy features that PL peak from Si-based InGaAs/GaAs microtubes is remarkably enhanced in intensity, slightly redshifted in position, and narrowed in full width at half maximum as compared with Si-based as-grown region. Raman spectroscopy manifests that Raman peaks for microtube on Si have smaller wavenumbers than those on GaAs, also detects the obvious blueshift of GaAs longitudinal-optical phonon frequency on microtube with respect to that of their as-grown counterparts.