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Crystal structure dependent thermal conductivity in two-dimensional phononic crystal nanostructures

机译:二维声子晶体纳米结构中依赖于晶体结构的热导率

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摘要

Thermal phonon transport in square- and triangular-lattice Si phononic crystal (PnC) nanostructures with a period of 300 nm was investigated by measuring the thermal conductivity using micrometer-scale time-domain thermoreflectance. The placement of circular nanoholes has a strong influence on thermal conductivity when the periodicity is within the range of the thermal phonon mean free path. A staggered hole structure, i.e., a triangular lattice, has lower thermal conductivity, where the difference in thermal conductivity depends on the porosity of the structure. The largest difference in conductivity of approximately 20% was observed at a porosity of around 30%. This crystal structure dependent thermal conductivity can be understood by considering the local heat flux disorder created by a staggered hole structure. Numerical simulation using the Monte Carlo technique was also employed and also showed the lower thermal conductivity for a triangular lattice structure. Besides gaining a deeper understanding of nanoscale thermal phonon transport, this information would be useful in the design of highly efficient thermoelectric materials created by nanopatterning.
机译:通过使用微米级时域热反射率测量导热率,研究了周期为300 nm的方格子和三角形格子Si声子晶体(PnC)纳米结构中的热声子传输。当周期性在热声子平均自由程的范围内时,圆形纳米孔的位置对导热性有很大影响。交错的孔结构,即三角形晶格,具有较低的热导率,其中热导率的差异取决于结构的孔隙率。在约30%的孔隙率下观察到电导率的最大差异约为20%。通过考虑由交错的孔结构产生的局部热通量紊乱,可以理解这种依赖于晶体结构的热导率。还使用了使用蒙特卡洛技术的数值模拟,并且还显示出三角形晶格结构的较低的热导率。除了对纳米级热声子传输有更深入的了解之外,该信息还将有助于设计由纳米图案化产生的高效热电材料。

著录项

  • 来源
    《Applied Physics Letters》 |2015年第2期|023104.1-023104.4|共4页
  • 作者单位

    Institute of Industrial Science, The University of Tokyo, Tokyo 153-8505, Japan;

    Institute of Industrial Science, The University of Tokyo, Tokyo 153-8505, Japan;

    Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan;

    Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan;

    Institute of Industrial Science, The University of Tokyo, Tokyo 153-8505, Japan,Institute for Nano Quantum Information Electronics, The University of Tokyo, Tokyo 153-8505, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
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  • 入库时间 2022-08-18 03:15:13

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