High efficiency, full-color AlInGaN quaternary nanowire light emitting diodes with spontaneous core-shell structures on Si

摘要

We have developed AlInGaN quaternary core-shell nanowire heterostructures on Si substrate, wherein an In-rich core and an Al-rich shell were spontaneously formed during the epitaxial growth process. By varying the growth conditions, the emission wavelengths can be tuned from ～430 nm to ～630nm. Such core-shell structures can largely suppress nonradiative surface recombination, leading to a significant enhancement of carrier lifetime from ～0.2 ns to ～2 ns. The resulting nanowire light emitting diodes can exhibit an output power exceeding 30 mW for a ～1 × 1 mm~2 non-packaged device at a current density of 100 A/cm~2.