机译:核-壳型InGaN / GaN多量子阱纳米线发光二极管效率的三维数值研究
Graduate Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan;
Epistar Corporation, Hsinchu Science Park, Hsinchu 300, Taiwan;
Epistar Corporation, Hsinchu Science Park, Hsinchu 300, Taiwan;
Epistar Corporation, Hsinchu Science Park, Hsinchu 300, Taiwan;
Epistar Corporation, Hsinchu Science Park, Hsinchu 300, Taiwan;
Graduate Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan;
机译:核-壳型InGaN / GaN多量子阱纳米线发光二极管效率的三维数值研究
机译:GaN / InGaN核-壳纳米线发光二极管阵列中量子阱的三维映射
机译:用于高效InGaN / GaN多量子阱纳米线发光二极管的InGaN有源层的形成特性
机译:核-壳型InGaN / GaN多量子阱纳米线LED效率的三维数值研究
机译:以极性,半极性和非极性方向生长的InGaN / GaN多量子阱发光二极管。
机译:高性能GaN / InGaN核壳纳米线发光二极管的载流子动力学和光电特性
机译:核壳型InGaN / GaN多量子阱纳米线LED效率的三维数值研究