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Three dimensional numerical study on the efficiency of a core-shell InGaN/GaN multiple quantum well nanowire light-emitting diodes

机译:核-壳型InGaN / GaN多量子阱纳米线发光二极管效率的三维数值研究

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摘要

This paper presents the findings of investigating core-shell multiple quantum well nanowire light-emitting diodes (LEDs). A fully self-consistent three dimensional model that solves Poisson and drift-diffusion equations was employed to investigate the current flow and quantum-confined stark effect. The core-shell nanowire LED showed a weaker droop effect than that of conventional planar LEDs because of a larger active area and stronger recombination in nonpolar quantum wells (QWs). The current spreading effect was examined to determine the carrier distribution at the sidewall of core-shell nanowire LEDs. The results revealed that a larger aspect ratio by increasing the nanowire height could increase the nonpolar-active area volume and reduce the droop effect at the same current density. Making the current spreading length exceed a greater nanowire height is critical for using the enhancement of nonpolar QWs effectively, when an appropriate transparent conducting layer might be necessary. In addition, this paper presents a discussion on the influences of the spacing between each nanowire on corresponding nanowire diameters.
机译:本文介绍了研究核壳多量子阱纳米线发光二极管(LED)的发现。使用求解泊松和漂移扩散方程的完全自洽三维模型来研究电流和量子限制的斯塔克效应。由于在非极性量子阱(QW)中具有更大的有效面积和更强的重组,因此核壳纳米线LED的下垂效应比常规平面LED弱。检查电流扩散效应以确定在核-壳纳米线LED侧壁处的载流子分布。结果表明,通过增加纳米线的高度来增大纵横比可以在相同电流密度下增加非极性活性区域的体积并降低下垂效应。当可能需要适当的透明导电层时,使电流扩展长度超过更大的纳米线高度对于有效使用非极性QW的增强至关重要。另外,本文提出了关于每个纳米线之间的间隔对相应的纳米线直径的影响的讨论。

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  • 来源
    《Journal of Applied Physics》 |2013年第18期|183104.1-183104.7|共7页
  • 作者单位

    Graduate Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan;

    Epistar Corporation, Hsinchu Science Park, Hsinchu 300, Taiwan;

    Epistar Corporation, Hsinchu Science Park, Hsinchu 300, Taiwan;

    Epistar Corporation, Hsinchu Science Park, Hsinchu 300, Taiwan;

    Epistar Corporation, Hsinchu Science Park, Hsinchu 300, Taiwan;

    Graduate Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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