机译:高度掺杂Mg的InN中转换为n型导电性与结构缺陷之间的相关性
Department of Physics, Chemistry, and Biology (IFM), Linkoeping University, S-581 83 Linkoeping, Sweden;
Department of Physics, Chemistry, and Biology (IFM), Linkoeping University, S-581 83 Linkoeping, Sweden;
State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, Peking University, Beijing 100871, China;
Center for SMART Green Innovation Research, Chiba University, Chiba 263-8522, Japan;
Department of Physics, Chemistry, and Biology (IFM), Linkoeping University, S-581 83 Linkoeping, Sweden;
Department of Physics, Chemistry, and Biology (IFM), Linkoeping University, S-581 83 Linkoeping, Sweden;
Department of Physics, Chemistry, and Biology (IFM), Linkoeping University, S-581 83 Linkoeping, Sweden;
Department of Physics, Chemistry, and Biology (IFM), Linkoeping University, S-581 83 Linkoeping, Sweden;
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机译:高度掺杂Mg的InN中转换为n型导电性与结构缺陷之间的相关性