机译:分子束外延生长的InAs纳米线的相干和自旋弛豫
Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, China;
Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, China;
Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, China;
State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, China;
Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, China;
State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, China Division of Solid State Physics, Lund University, Box 118, S-221 00 Lund, Sweden;
机译:通过分子束外延生长的Gaassb / Inas Core-Shell纳米线
机译:分子束外延生长GaAs衬底上InAs纳米线的形貌和微观结构
机译:分子束外延生长的金种子InAs纳米线的不均匀硅掺杂
机译:通过选择区域分子束外延在GaAs(110)掩蔽基板上横向生长INAS纳米线的磁传输性能
机译:分子束外延生长的III族氮化物纳米线紫外发光二极管的均相和电流注入研究与工程
机译:用于分子束外延生长自催化InAs纳米线的石墨平台
机译:通过分子生长的金接种Inas纳米线的非均匀si掺杂 束外延