Response to 'Comment on 'Determination of alloy composition and strain in multiple AlGaN buffer layers in GaN/Si system'' [Appl. Phys. Lett. 106,176101 (2015)

摘要

In our recent publication on analyzing (Al)GaN epi-layers grown on Si (111) substrates using x-ray diffractome-try (XRD), we described a method of using the Si substrate as the reference for analyzing the nitride epilayers rather than using an epilayer such as GaN as the reference. In XRD, substrates are typically used as a reference for characterizing the epilayers since their strain states are not significantly influenced by the growth of epilayers. However, in the case of Ⅲ-nitride semiconductors grown hetero-epitaxially on a foreign substrate, it is difficult to find a suitable combination of substrate and epilayer asymmetric reflections, which can be measured in the same scattering plane. Therefore, the research community often uses GaN epilayers as the reference.